Features: ·Linear Power Amplifier·Output Power Adjust·23.0 dB Small Signal Gain·+25.0 dBm P1dB Compression Point·+35.0 dBm OIP3·100% On-Wafer RF TestingThe above info is from (www.seekic.com)Specifications Supply Voltage (Vd)Supply Current (Id)Gate Bias Voltage (Vg)Input Power (Pin)Storage Tempe...
P1031-BD: Features: ·Linear Power Amplifier·Output Power Adjust·23.0 dB Small Signal Gain·+25.0 dBm P1dB Compression Point·+35.0 dBm OIP3·100% On-Wafer RF TestingThe above info is from (www.seekic.com)Specifi...
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| Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) ESD - Human Body Model ESD - Machine Body Model |
+6.0 VDC 800 mA +0.3 VDC +5.0 dBm -65 to +165 deg C -55 to MTTF Table1 MTTF Table1 Class 1A Class M1 |
Mimix Broadband's four stage 37.0-42.0 GHz GaAs MMIC power amplifier has a small signal gain of 23.0 dB with a +35.0 dBm Output Third Order Intercept. This P1031-BD MMIC uses Mimix Broadband's 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. P1031-BD is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.The above info is from (www.seekic.com)