Features: ·Excellent Transmit Output Stage·Output Power Adjust·26.0 dB Small Signal Gain·+25.0 dBm P1dB Compression Point·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specifications Supply Voltage (Vd) +6.0 VDC Supply Current (Id1,2,3,4) ...
P1018-BD: Features: ·Excellent Transmit Output Stage·Output Power Adjust·26.0 dB Small Signal Gain·+25.0 dBm P1dB Compression Point·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
US $15.75 - 25.2 / Piece
Processors - Application Specialized P1010 IND STDENC 533/667
Supply Voltage (Vd) | +6.0 VDC |
Supply Current (Id1,2,3,4) | 45,80,165,325 mA |
Gate Bias Voltage (Vg) | +0.3 VDC |
Input Power (Pin) | TBD |
Storage Temperature (Tstg) | -65 to +165 |
Operating Temperature (Ta) | -55 to MTTF Table1 |
Channel Temperature (Tch) | MTTF Table1 |
Mimix Broadband's four stage 37.0-42.0 GHz GaAs MMIC power amplifier has a small signal gain of 26.0 dB with a +25.0 dBm P1dB output compression point. This P1018-BD MMIC uses Mimix Broadband's 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The P1018-BD chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. P1018-BD is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.