Features: ·Excellent Linear Output Amplifier Stage·19.0 dB Small Signal Gain·+30.0 dBm P1dB Compression Point·+39.0 dBm Third Order Intercept (OIP3)·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specifications Supply Voltage (Vd) +5.5 VDC S...
P1010: Features: ·Excellent Linear Output Amplifier Stage·19.0 dB Small Signal Gain·+30.0 dBm P1dB Compression Point·+39.0 dBm Third Order Intercept (OIP3)·100% On-Wafer RF, DC and Output Power Testing·100...
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US $15.75 - 25.2 / Piece
Processors - Application Specialized P1010 IND STDENC 533/667
US $16.58 - 26.53 / Piece
Processors - Application Specialized P1010 IND STDENC 667/667
Supply Voltage (Vd) | +5.5 VDC |
Supply Current (Id1,2) | 600,670 mA |
Gate Bias Voltage | +0.3 VDC |
Input Power (Pin) | +15 dBm |
Storage Temperature (Tstg) | -65 to +165 OC |
Operating Temperature (Ta) | -55 to MTTF TAble 3 |
Channel Temperature (Tch) |
MTTF Table 3 |
Mimix Broadband's two stage 21.0-24.0 GHz GaAs MMIC power amplifier P1010 is optimized for linear operation with a third order intercept point of +39.0 dBm. This MMIC uses Mimix Broadband's 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip P1010 has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This P1010 is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.