Features: ·Balanced Design Provides Good Input/Output Match·On-Chip Temperature Compensated Output Power Detector·16.0 dB Small Signal Gain·+33.0 dBm Third Order Intercept (OIP3)·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specifications Supp...
P1017-BD: Features: ·Balanced Design Provides Good Input/Output Match·On-Chip Temperature Compensated Output Power Detector·16.0 dB Small Signal Gain·+33.0 dBm Third Order Intercept (OIP3)·100% On-Wafer RF, D...
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Processors - Application Specialized P1010 IND STDENC 533/667
Supply Voltage (Vd) | +6.0 VDC |
Supply Current (Id) | 950 mA |
Gate Bias Voltage | +0.3 VDC |
Input Power (Pin) | +15 dBm |
Storage Temperature (Tstg) | -65 to +165 |
Operating Temperature (Ta) | -55 to MTTF TAble4 |
Channel Temperature (Tch) | MTTF Table4 |
(4) Channel temperature affects a device's MTTF. It is recommended
to keep channel temperature as low as possible for maximum life.
Mimix Broadband's two stage 30.0-36.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +33.0 dBm. The P1017-BD also includes Lange couplers to achieve good input/output return loss and an on-chip temperature compensated output power detector. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The P1017-BD chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. P1017-BD is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.