Features: ·Excellent Driver Stage·14.0 dB Small Signal Gain·+24.0 dBm P1dB Compression Point·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specifications Supply Voltage (Vd)Supply Current (Id)Gate Bias Voltage (Vg)Input Power (Pin)Storage Tempe...
P1016: Features: ·Excellent Driver Stage·14.0 dB Small Signal Gain·+24.0 dBm P1dB Compression Point·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specificat...
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Processors - Application Specialized P1010 IND STDENC 533/667
Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) |
+6.0 VDC 1160 mA +0.3 VDC +20 dBm -65 to +165 -55 to MTTF Table1 MTTF Table1 |
Mimix Broadband's three stage 43.5-46.5 GHz GaAs MMIC power amplifier has a small signal gain of 14.0 dB with +24.0 dBm P1dB output compression point. This P1016 MMIC uses Mimix Broadband!s 0.15m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The P1016 chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.