P1016

Features: ·Excellent Driver Stage·14.0 dB Small Signal Gain·+24.0 dBm P1dB Compression Point·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specifications Supply Voltage (Vd)Supply Current (Id)Gate Bias Voltage (Vg)Input Power (Pin)Storage Tempe...

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SeekIC No. : 004438961 Detail

P1016: Features: ·Excellent Driver Stage·14.0 dB Small Signal Gain·+24.0 dBm P1dB Compression Point·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specificat...

floor Price/Ceiling Price

Part Number:
P1016
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

·Excellent Driver Stage
·14.0 dB Small Signal Gain
·+24.0 dBm P1dB Compression Point
·100% On-Wafer RF, DC and Output Power Testing
·100% Visual Inspection to MIL-STD-883 Method 2010



Specifications

Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
1160 mA
+0.3 VDC
+20 dBm
-65 to +165
-55 to MTTF Table1
MTTF Table1

(1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.


Description

Mimix Broadband's three stage 43.5-46.5 GHz GaAs MMIC power amplifier has a small signal gain of 14.0 dB with +24.0 dBm P1dB output compression point. This P1016 MMIC uses Mimix Broadband!s 0.15m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The P1016 chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.




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