P1014

Features: ·XP1006/7 Driver Amplifier·18.0 dB Small Signal Gain·+31.0 dBm Saturated Output Power·35% Power Added Efficiency·On-chip Gate Bias Circuit·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specifications Supply Voltage (Vd) +9.0 VDC S...

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SeekIC No. : 004438960 Detail

P1014: Features: ·XP1006/7 Driver Amplifier·18.0 dB Small Signal Gain·+31.0 dBm Saturated Output Power·35% Power Added Efficiency·On-chip Gate Bias Circuit·100% On-Wafer RF, DC and Output Power Testing·100...

floor Price/Ceiling Price

Part Number:
P1014
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

·XP1006/7 Driver Amplifier
·18.0 dB Small Signal Gain
·+31.0 dBm Saturated Output Power
·35% Power Added Efficiency
·On-chip Gate Bias Circuit
·100% On-Wafer RF, DC and Output Power Testing
·100% Visual Inspection to MIL-STD-883 Method 2010



Specifications

Supply Voltage (Vd) +9.0 VDC
Supply Current (Id) 510 mA
Gate Bias Voltage (Vg) +0.0 VDC
Input Power (Pin) TBD
Storage Temperature (Tstg) -65 to +165
Operating Temperature (Ta) -55 to MTTF Table 1
Channel Temperature (Tch) MTTF Table1

(1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.




Description

Mimix Broadband's two stage 8.5-11.0 GHz GaAs MMIC power amplifier has a small signal gain of 18.0 dB with a +31 dBm saturated output power and also includes on-chip gate bias circuitry. This P1014 MMIC uses Mimix Broadband's 0.5 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The P1014  chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for radar applications.




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