Features: ·XP1006/7 Driver Amplifier·18.0 dB Small Signal Gain·+31.0 dBm Saturated Output Power·35% Power Added Efficiency·On-chip Gate Bias Circuit·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specifications Supply Voltage (Vd) +9.0 VDC S...
P1014: Features: ·XP1006/7 Driver Amplifier·18.0 dB Small Signal Gain·+31.0 dBm Saturated Output Power·35% Power Added Efficiency·On-chip Gate Bias Circuit·100% On-Wafer RF, DC and Output Power Testing·100...
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Processors - Application Specialized P1010 IND STDENC 533/667
Supply Voltage (Vd) | +9.0 VDC |
Supply Current (Id) | 510 mA |
Gate Bias Voltage (Vg) | +0.0 VDC |
Input Power (Pin) | TBD |
Storage Temperature (Tstg) | -65 to +165 |
Operating Temperature (Ta) | -55 to MTTF Table 1 |
Channel Temperature (Tch) | MTTF Table1 |
(1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
Mimix Broadband's two stage 8.5-11.0 GHz GaAs MMIC power amplifier has a small signal gain of 18.0 dB with a +31 dBm saturated output power and also includes on-chip gate bias circuitry. This P1014 MMIC uses Mimix Broadband's 0.5 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The P1014 chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for radar applications.