Features: ·Excellent Saturated Output Stage·Competitive RF/DC Bias Pin for Pin Replacement·20.0 dB Small Signal Gain·+24.0 dBm Saturated Output Power·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specifications Supply Voltage (Vd) +9.0 VDC...
P1013-BD: Features: ·Excellent Saturated Output Stage·Competitive RF/DC Bias Pin for Pin Replacement·20.0 dB Small Signal Gain·+24.0 dBm Saturated Output Power·100% On-Wafer RF, DC and Output Power Testing·10...
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Processors - Application Specialized P1010 IND STDENC 533/667
Supply Voltage (Vd) |
+9.0 VDC |
Supply Current (Id) |
650 mA |
Gate Bias Voltage (Vg) |
+0.3 VDC |
Input Power (Pin) |
+5.0 dBm |
Storage Temperature (Tstg) |
-65 to +165 |
Operating Temperature (Ta) |
-55 to MTTF Table 1 |
Channel Temperature (Tch) |
MTTF Table 1 |
Mimix Broadband's three stage 17.0-26.0 GHz GaAs MMIC power amplifier has a small signal gain of 20.0 dB with a +24.0 dBm saturated output power. This P1013-BD MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The P1013-BD chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.