Features: ·Excellent Linear Output Amplifier Stage·21.0 dB Small Signal Gain·+36.0 dBm Third Order Intercept (OIP3)·+27.0 dBm Output P1dB Compression Point·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specifications Supply Voltage (Vd) +5...
P1011-BD: Features: ·Excellent Linear Output Amplifier Stage·21.0 dB Small Signal Gain·+36.0 dBm Third Order Intercept (OIP3)·+27.0 dBm Output P1dB Compression Point·100% On-Wafer RF, DC and Output Power Test...
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Processors - Application Specialized P1010 IND STDENC 533/667
Supply Voltage (Vd) |
+5.5 VDC |
Supply Current (Id1,2,3) |
155,415,715 mA |
Gate Bias Voltage |
+0.3 VDC |
Input Power (Pin) |
+8 dBm |
Storage Temperature (Tstg) |
-65 to +165 |
Operating Temperature (Ta) |
-55 to MTTF TAble3 |
Channel Temperature (Tch) |
MTTF Table3 |
(3) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
Mimix Broadband's three stage 36.0-40.0 GHz GaAs MMIC power amplifier P1011-BD is optimized for linear operation with a third order intercept point of +36.0 dBm. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip P1011-BD has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This P1011-BD is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.