OTL310

Opto Technology's OTL310D and OTL310S feature high power GaA1As LEDs mounted in a TO-46 metal case.With a peak wavelength of 880 nm,overall system efficiency is increased when used with silicon detectors.Special screening of these devices available upon request.Here you can get some information about the features.First high power output.Then is hermetically sealed package.The last one is solid header for better thermal characteristics.

What comes next is about the absolute maximum ratings of OTL310.The reverse voltage is 5 V.The continuous forward current is 100 mA.The peak forward current (PW=10s;100 Hz) is 3 A.The power dissipation is 200 mW.The storage temperature range is from -65 to +150.The operating temperature range is from -65 to +150.The lead soldering temperature (for 5 sec,with soldering iron) is 240.

The following is about the electrical characteristics of OTL310 (25).The minimum P_O (total power output) is 8.0 mW and the typical is 9.5 mW.The typical V_F (forward voltage) is 1.5 V and the maximum is 1.8 V at I_F=100 mA.The maximum I_R (reverse current) is 100A at V_R=3 V.The typical _P (peak emission wavelength) is 880 nm at I_F=100 mA.The typical (spectral bandwidth @ 50%) is 50 nm.The typical _P/T (spectral shift with temperature) is 0.30 nm/.The typical H (half intesity beam angle) is 20 Deg for OTL310D and is 80 Deg for OTL310S.The typical t_r,t_f (rise or fall time) is 500 nS.