Features: SpecificationsDescriptionThe OTL305 emitters are high intensity gallium arsenide infrared emitting diodes mounted in a TO-46 metal case.The OTL305D features a domed lens and the OTL305S a flat window.These devices offer high reliability and low degradation versus time.Special screening i...
OTL305: Features: SpecificationsDescriptionThe OTL305 emitters are high intensity gallium arsenide infrared emitting diodes mounted in a TO-46 metal case.The OTL305D features a domed lens and the OTL305S a ...
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The OTL305 emitters are high intensity gallium arsenide infrared emitting diodes mounted in a TO-46 metal case.The OTL305D features a domed lens and the OTL305S a flat window.These devices offer high reliability and low degradation versus time.Special screening is available upon request.Here you can get some information about the features.First is GaAs LED.Then is hermetically sealed package.The last one is solid header for better thermal characteristics.
What comes next is about the absolute maximum ratings of OTL305.The reverse voltage is 5 V.The continuous forward current is 100 mA.The peak forward current (PW=10s;100 Hz) is 3 A.The power dissipation is 200 mW.The storage temperature range is from -65 to +150.The operating temperature range is from -65 to +150.The lead soldering temperature (for 5 sec,with soldering iron) is 240.
The following is about the electrical characteristics of OTL305 (25).The PO (total power output) is 3.0 mW.The typical VF (forward voltage) is 1.3 V and the maximum is 1.5 V at IF=100 mA.The maximum IR (reverse current) is 100A at VR=3 V.The typical P (peak emission wavelength) is 940 nm at IF=100 mA.The typical (spectral bandwidth @ 50%) is 50 nm.The typical P/T (spectral shift with temperature) is 0.20 nm/.The typical H (half intesity beam angle) is 20 Deg for OTL305D and is 80 Deg for OTL305S.The typical tr,tf (rise or fall time) is 800 nS.