OT406

      OT406 has four-quadrant triac and enhanced noise immunity.It uses passivated sensitive gate triac in a SOT223 surface-mountable plastic package.
      OT406 has 6 features.The first one is that it has sensitive gate. The seconnd one is about gate triggering in four quadrants.The third one is about direct interfacing to logic level ICs. The fourth one is about direct interfacing to low power gate drive circuits.The fifth one is about enhanced immunity to voltage transients and noise.The last one is about blocking voltage to 600 V.
      OT406 can be applied to home appliances,low power motor control,low power AC fan speed controllers and low power loads in industrial process control.
      The following is about OT406's quick reference data. The first one is about  V_DRM 600 V . The second one is about  I_GT 3 mA.The third one is about I_TSM 12.5 A (t = 20 ms) The fourth one is about  I_GT 5 mA (T2- G+).The last one is about  I_T(RMS) 1 A.
      Limiting values of OT406 are in accordance with the absolute maximum rating system (IEC 60134).Maximum  V_DRM(repetitive peak off-state voltage) is 600 V.Maximum  V_RRM(repetitive peak reverse voltage) is 600 V.Maximum I_T(RMS) which means RMS on-state current is 1 A under the condition of full sine wave and Tsp 103 .Maximum I_TSM(non repetitive peak on-state current) is 12.5 A under the condition of full sine wave and Tj = 25 prior to surge with t = 20 ms.Maximum I_TSM(non-repetitive peak on-state current) is 13.8 A under the condition of full sine wave and Tj = 25 prior to surge with t = 16.7 ms.Maximum I²t(I²t for fusing) is 1.28 A²s under the condition of tp = 10 ms.Maximum  dI_T/dt(rate of rise of on-state current) is 50 A/s under the condition of I_TM= 1 A and IG = 20 mA and dI_G/dt= 0.2 A/ms with T2+ G+.Maximum dI_T/dt(rate of rise of on-state current) is 50 A/s under the condition of I_TM = 1 A and I_G = 20 mA and dI_G/dt= 0.2 A/ms with T2+ G-.Maximum dI_T/dt(rate of rise of on-state current) is 50 A/s under the condition of I_TM = 1 A and  I_G  = 20 mA and dI_G/dt= 0.2 A/ms with T2- G-.Maximum dI_T/dt(rate of rise of on-state current) is 10 A/s under the condition of I_TM = 1 A and I_G = 20 mA and dI_G/dt= 0.2 A/ms with T2- G+.Maximum I_GM(peak gate current) is 1 A.Maximum  P_GM(peak gate power) is 2 W.Maximum  P_G(AV) which means average gate power is 0.1W under the condition of over any 20 ms period.Maximum Tstg(storage temperature) is +150 while minimum Tstg is -40 .Maximum Tj(junction temperature) is 125 .