OT403

The OT403 sensor consists of an NPN silicon phototransistor mounted in a low cost T-1 plastic package.The lensing effect of the package allows an acceptance half angle of the 7.5 degrees measured from the optical axis to the half power point.This device is mechanically matched to the OTL303 and OTL313 emitters and is offered in two standard ranges.Other screening of the OT403 is available upon request.Here you can get some information about the features.First is low cost.Then is miniature plastic T-1 package.The last one is mechanically matched to the OTL303 and OTL313 infrared emitters.

What comes next is about the absolute maximum ratings of OT403(T_A=25 unless otherwise specified).The collector-emitter voltage is 30 V.The emitter-collector voltage is 5 V.The power dissipation is 100 mW.The storage temperature range is from -55 to +100.The operating temperature range is from -55 to +100.The lead soldering temperature (for 5 sec with soldering iron) is 240.

The following is about the electrical characteristics of OT403(25).The minimum I_C(ON) (light current) is 1 mA at H=1 mW/cm2 for OT403-1.The minimum I_C(ON) (light current) is 2 mA and the maximum is 8 mA at H=1 mW/cm2 for OT403-2.The minimum I_C(ON) (light current) is 5 mA at H=1 mW/cm2 for OT403-3.The maximum I_CEO (dark current) is 40 nA at V_CE=10 V,H=0.The minimum V_CEO (collector-emitter voltage) is 30 V.The minimum V_ECO (emitter-collector voltage) is 5 V.The maximum V_CE(SAT) (saturation voltage) is 0.4 V at I_C=1 mA.The typical (angular response) is 15 Deg.The typical t_r,t_f (rise time or fall time) is 5S at R_L=1000,V_CC=10 V.