OSD50-5T

The OSD50-5T is designed as silicon photodetectors which would be a range of low cost detectors offering high blue sensitivity coupled with high shunt resistance and low dark leakage current. OSD50-5T are particularity suited to low light level applications throughout the spectral range 430 to 900 nm and for applications where the highest signal to noise ratio is important. The detectors may be operated in the photovoltaic mode with reverse bias to achieve a lower capacitance. OSD50-5T provide the most economic solution for all applications where high speed of response above 800nm is not critical.

Some absolute maximum ratings of OSD50-5T have been concluded into several points as follow. The first one is about its DC reverse voltage which would be 15V. The next one is about its peak pulse current (1uS, 1% duty cycle) which would be 200mA. The next one is about its peak DC current which would be 10mA. The next one is about its storage temperature range which would be from -45°C to +100°C. The next one is about its operating temperature range which would be from -25°C to +75°C. The next one is about its soldering temperature for 5 seconds max which would be 200°C.

Also there are some electrical specifications about OSD50-5T. The first one is about its active area which would be 50mm2 and 7.98mm dia. The next one is about its responsivity A/W L=436nm which would be min 0.15 and max 0.21. The next one is about its dark current which would be mix 150nA and typ 5nA. The next one is about its NEP WHz-1/2 L=436nm which would be typ 3.8 X 10^-13. The next one is about its capacitance which would be max 1300pF at Vr=0V and would be max 270pF at Vr=12V. The next one is about its shunt resistance which would be min 1.5M and typ 25M. And so on. For more information please contact us.