OSD5-5T

The OSD5-5T is designed as silicon photodetectors which offer blue sensitivity coupled with high shunt resistance and low dark leakage current. OSD5-5T are paticularity suited to low level applications from 430 to 900nm where the highest signal to noise ratio is important. They may be operated photovoltaically or with a reverse bias of up to 12V where lower capacitance is needed.

Some absolute maximum ratings of OSD5-5T have been concluded into several points as follow. The first one is about its DC reverse voltage which would be 30V. The next one is about its storage temperature range which would be from -45°C to +100°C. The next one is about its operating temperature range which would be from -25°C to +75°C. That are all the main absolute maximum ratings. It should be noted that stresses above the values listed in "absolute maximum ratings" may cause permanent damage on it.

Also there are some electrical specifications of OSD5-5T (measured at 22°C ambient, and a reverse bias of 12 volts, unlesswise stated and shunt resistance measured at +/- 10mV) having been concluded into several points as follow. The first one is about its active area which would be 5mm2 and 2.52mm dia. The next one is about its dark current which would be mix 2nA and typ 0.2nA. The next one is about its NEP WHz-1/2 L=436nm which would be typ 3.3 X 10^-14. The next one is about its capacitance which would be max 130pF at Vr=0V and would be max 35pF at Vr=12V. The next one is about its shunt resistance which would be min 100M and typ 600M. The next one si about its risetime at =820nm and R=50 which would be typ 9ns. The next one is about its package which would be 9. And so on. If you have any question or suggestion or want to know more information about OSD5-5T please contact us for details.