Features: • Ultra high-speed : 25ns rise time• 880nm wavelength• Narrow beam angle• Low forward voltage• High power and high reliability• Available for pulse operatingApplication• Emitter of IrDA• IR Audio and Telephone• High speed IR communica...
OPE5587: Features: • Ultra high-speed : 25ns rise time• 880nm wavelength• Narrow beam angle• Low forward voltage• High power and high reliability• Available for pulse oper...
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Item |
Symbol |
Rating |
Unit |
Power Dissipation |
PD |
150 |
mW |
Forward current |
IF |
100 |
mA |
Pulse forward current *1 |
IFP |
1.0 |
A |
Reverse voltage |
VR |
4.0 |
V |
Operating temp. |
Topr |
-25~ +85 |
|
Soldering temp. *2 |
Tsol |
260 |
The OPE5587 is GaAlAs infrared emitting diode that is designed for high power, low forward voltage and high speed rise / fall time.
This OPE5587 device is optimized for speed and efficiency at emission wavelength 880nm and has a high radiant efficiency over a wide range of forward current.
This OPE5587 device is packaged T1-3/4 package and has narrow beam angle with lensed package and cup frame. Especially this device is suited as the emitter of data transmission without cable.