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OPE5585

Features: • High speed : 25ns rise time• 850nm wavelength• Narrow beam angle• Low forward voltage• High power and high reliability• Available for pulse operatingApplication• Emitter of IrDA• IR Audio and Telephone• High speed IR communication&#...

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SeekIC No. : 004438546 Detail

OPE5585: Features: • High speed : 25ns rise time• 850nm wavelength• Narrow beam angle• Low forward voltage• High power and high reliability• Available for pulse operatingA...

OPE5585 Data Sheet

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Part Number:
OPE5585
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/12

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Product Details

Description



Features:

• High speed : 25ns rise time
• 850nm wavelength
• Narrow beam angle
• Low forward voltage
• High power and high reliability
• Available for pulse operating


Application

• Emitter of IrDA
• IR Audio and Telephone
• High speed IR communication
• IR LANs
• Available for wireless digital data transmission


Specifications

Item
Symbol
Rating
Unit
Power Dissipation
PD
150
mW
Forward current
IF
100
mA
Pulse forward current      *1
IFP
1.0
A
Reverse voltage
VR
4.0
V
Operating temp.
Topr
-25~ +85
Soldering temp.      *2
Tsol
260


*1.Duty ratio = 1/100, pulse width=0.1ms.
*2.Lead Soldering Temperature (2mm from case for 5sec.).


Description

The OPE5585 is GaAlAs infrared emitting diode  that is designed for high power, low forward voltage and high speed rise / fall time.

This OPE5585 device is optimized for speed and efficiency at emission wavelength 850nm and has a high radiant efficiency over a wide range of forward current.

This OPE5585 device is packaged T1-3/4 plastic package and has narrow beam angle with lensed package and cup frame. Especially this device is suited as the emitter of data transmission without cable.




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