Optical Switches, Reflective, with Phototransistor Output EMMITER/SENSOR ASSEM
OPB710: Optical Switches, Reflective, with Phototransistor Output EMMITER/SENSOR ASSEM
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The OPB710 consist of a gallium arsenide infrared emitting diode and an NPN silicon phototransistor.The emitting diode and detector are mounted side by side on parallel axes on a standard TO-72 header.A black plastic sleeve is attached and filled with encapsulating epoxy to cover the emitter and detector.The "F" version has a filtering material added to the epoxy to reduce the effect of ambient light.The package contains an internal barrier which prevents diode emissions from reaching the sensor directly.
Features of the OPB710 are: (1)phototransistor output; (2)unfocused for sensing diffuse surface; (3)mounted on standard TO-72 header; (4)available in clear encapsulating epoxy (OPB710) to reduce the effect of visible or fluorescent light.In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
The absolute maximum ratings of the OPB710 can be summarized as:(1)collector-emitter voltage:30 V;(2)storage temperature range:-20 to 85;(3)emitter-collector voltage:5.0V;(4)power dissipation:150mW;(5)forward DC current:50mA;(6)lead soldering temperature:240.The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite).
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Technical/Catalog Information | OPB710 |
Vendor | TT Electronics/Optek Technology |
Category | Sensors, Transducers |
Sensing Distance | 0.250" (6.35mm) |
Sensing Method | Reflective |
Output Type | Phototransistor |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Current - Collector (Ic) (Max) | 25mA |
Current - DC Forward (If) | 50mA |
Response Time | - |
Operating Temperature | 0°C ~ 70°C |
Features | Fluorescent Lamp Light Filters |
Mounting Type | Through Hole |
Package / Case | TO-72 |
Packaging | Bulk |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | OPB710 OPB710 365 1012 ND 3651012ND 365-1012 |