OPB660N

Optical Switches, Transmissive, with Phototransistor Output Photo transistor Slotted Opt Switch

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SeekIC No. : 0086193 Detail

OPB660N: Optical Switches, Transmissive, with Phototransistor Output Photo transistor Slotted Opt Switch

floor Price/Ceiling Price

US $ .99~1.78 / Piece | Get Latest Price
Part Number:
OPB660N
Mfg:
Optek
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~50
  • 50~100
  • 100~250
  • Unit Price
  • $1.78
  • $1.35
  • $1.02
  • $.99
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description

Series: -
Sensing Method: Transmissive
Mounting Type: Through Hole
Package / Case: PCB Mount
Current - Collector (Ic) (Max): 30mA
Current - DC Forward (If): 50mA
Packaging: Bulk
Sensing Distance: 0.125" (3.18mm)
Manufacturer: TT Electronics/Optek Technology
Output Configuration: Transistor, Base-Emitter Resistor
Voltage - Collector Emitter Breakdown (Max): 24V
Response Time: -


Description

The OPB660N belongs to OPB660 family which is a kind of slotted optical switch which consists of an NPN phototransistor and an infrared emitting diode mounted on opposite sides of a (3.18 mm) wide slot. The emitter has a x molded aperture while the phototransistor has a 0.010" x molded aperture. The phototransistor has an enhanced low current roll-off which improves contrast ratio and immunity to background irradiance.

The features of OPB660N can be summarized as (1)non-contact switching; (2)0.125" (3.18 mm) wide gap; (3)0.320"(8.13 mm) Lead spacing; (4)N or T package; (5)printed circuit board mounting; (6)enhanced signal to noise ratio.

The absolute maximum ratings of OPB660N are (1)storage and operating temperature: -40 to +100°C; (2)lead soldering temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering iron]: 260°C(RMA flux is recommended. Duration can be extended to 10 sec. max when flow soldering.); (3)forward DC current: 50 mA; (4)peak forward current (1 us pulse width, 300 pps): 3.0 A; (5)reverse DC voltage: 3.0V; (6)power dissipation: 100 mW(2: Derate linearly 1.33mW/°C above 25°C); (7)collector-emitter voltage: 30V; (8)emitter-reverse current: 10mA; (9)power dissipation: 200mW; (10)collector DC current: 30mA.




Parameters:

Technical/Catalog InformationOPB660N
VendorTT Electronics/Optek Technology
CategorySensors, Transducers
Sensing Distance0.125" (3.18mm)
Sensing MethodTransmissive
Voltage - Collector Emitter Breakdown (Max)24V
Current - Collector (Ic) (Max)30mA
Current - DC Forward (If)50mA
Output ConfigurationTransistor, Base-Emitter Resistor
Response Time-
TypeUnamplified
Mounting TypeThrough Hole
Package / CasePCB Mount
PackagingBulk
Operating Temperature-40°C ~ 100°C
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names OPB660N
OPB660N



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