OPB606

The OPB606 consists of an infrared emitting diode and an NPN silicon phototransistor mounted"side-by-side"on parallel axes in a black opaque plastic housing.Both the emitting diode and phototransistor are encapsulated in a fitering epoxiy to reduce ambient light noise.The phototransistor responds to radiation from the emitter only when a reflective object passes within its field of view.

Features of the OPB606 are:(1)phototransistor output ; (2)unfocused for sensing diffuse surface; (3)low cost plastic housing.

The absolute maximum ratings of the OPB606 can be summarized as:(1)storage and operating temperature:-40 to 85; (2)lead soldering temperature:240; (3)forward DC current:50mA; (4)peak forward current:3.0A; (5)reverse DC voltage:2.0V; (6)power dissipation:75mW; (7)collector-emitter voltage:30V; (8)emitter-collector voltage:5.0V; (9)collector DC current:25mA.

If you want to know more information such as the electrical characteristics of OPB606 ,please download the datasheet in www.seekdatasheet.com .