OPB608B

Series: -
Sensing Method: Reflective
Current - DC Forward (If): 50mA
Output Type: Phototransistor
Response Time: -
Mounting Type: Through Hole
Package / Case: PCB Mount
Packaging: Bulk
Voltage - Collector Emitter Breakdown (Max): 30V
Sensing Distance: 0.050" (1.27mm)
Manufacturer: TT Electronics/Optek Technology
Current - Collector (Ic) (Max): 25mA


Features:

• Phototransistor Output
• Unfocused for sensing diffuse surface
• Low Cost Plastic Housing
• Enhanced signal to noise ratio
• Reduced ambient light sensitivity


Specifications

Storage and Operating Temperature	-40 to +85
Lead Soldering Temperature (1/16" (1.6mm) from case for 5 seconds with soldering iron)	260 (1)
Forward DC Current	50 mA
Peak Forward Current (1s pulse width, 300 pps)	3.0 A
Reverse DC voltage	2.0 V
Power Dissipation	75 mW (3)
Forward DC Current	50 mA
Reverse DC voltage	5.0 V
Power Dissipation	100 mW (3)
Forward DC Current	30 mA
Reverse DC voltage	5.0 V
Power Dissipation	75 mW (3)
Collector-Emitter Voltage	30 V
Emitter Reverse Current	10 mA
Collector DC Current	25 mA
Power Dissipation	100 mW (3)

Notes:
(1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
(2) Methanol or isopropanol are recommended as cleaning agents. The plastic housing is soluble in chlorinated  ydrocarbons and keytones.
(3) Derate Linearly 1.6 mW/ above 25.

Description

The OPB608A/B/C is a reflective switch that consist of an infrared emitting device (LED or VCSEL) and an NPN silicon  hototransistor mounted "side-by-side" on a parallel axis in a black opaque plastic housing. Both the eitting device  nd phototransistor are encapsulated in a visible filtering epoxy except the OPB608R. The phototransistor responds to radiation from the emitter only when a reflective object passes within its field of view. The phototransistor has   hanced low current roll off to improve the contrast ratio and immunity to background irradiance. The LED versions are designed for near field applications with the VCSEL version being designed for longer distances.

The OPB608A/B/C devices are designed for applications with reflective distances between 0.050" and 0.375" and  hen the light pattern is not to be seen by the human eye except for the OPB608R. By utilizing the  night  nhancement function of a camera, the near infrared light pattern can be seen. This allows the user to see the pattern shining on the reflective object.

The OPB608A/B/C device is designed for applications with reflective distances between 0.050" and 0.300" and when the light pattern is to be seen by the human eye. The efficiency of the sensor is lower for optical wavelengths in the visible range thus reducing the distance that can be used.

The OPB608A/B/C device is designed for applications with reflective distances between 0.050" and 1.5" and when the light pattern is not to be seen by the human eye. By utilizing the night enhancement function of a camera, the near infrared light pattern can be seen. This allows the user to see the pattern shining on the reflective object.

Reflective distances are dependent upon the drive current for the light emitting device, the wavelength of the light source, and the type of reflective material, therefore each application should be checked for the ability to meet each application.

Parameters:

Technical/Catalog Information	OPB608B
Vendor	TT Electronics/Optek Technology
Category	Sensors, Transducers
Sensing Distance	0.050" (1.27mm)
Sensing Method	Reflective
Output Type	Phototransistor
Voltage - Collector Emitter Breakdown (Max)	30V
Current - Collector (Ic) (Max)	25mA
Current - DC Forward (If)	50mA
Response Time	-
Operating Temperature	-40°C ~ 85°C
Features	Unfocused Sensing
Mounting Type	Through Hole
Package / Case	PCB Mount
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	OPB608B OPB608B