DescriptionThe OP265 is 890nm gallium alumimum arsenide infrared emitting diodes mounted in hermetically sealed pill type packages. The features of OP265 are: (1)wide irradiance pattern; (2)mechanically and spectrally matched to the OP505W; (3)small package size permits high device density mount...
OP265: DescriptionThe OP265 is 890nm gallium alumimum arsenide infrared emitting diodes mounted in hermetically sealed pill type packages. The features of OP265 are: (1)wide irradiance pattern; (2)mechan...
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The OP265 is 890nm gallium alumimum arsenide infrared emitting diodes mounted in hermetically sealed "pill" type packages. The features of OP265 are: (1)wide irradiance pattern; (2)mechanically and spectrally matched to the OP505W; (3)small package size permits high device density mounting; (4)T-1 package style; (5)significantly higher power output than GaAs at equivalent drive currents.
The following is about the absolute maximum ratings of OP265: (1)reverse voltage: 2.0V; (2)continous forward current: 50mA; (3)peak forward current (1s pulse width, 300 pps): 3.0A; (4)Storage Temperature Range: 40°C to +100°C; (5)Operating Temperature Range: 40°C to +100°C; (6)Lead Soldering Temperature: 260°C; (7)power dissipation: 100mW.
The electrical characteristics of the OP265 are: (1)radiant power output: 1.00 mW at IF=20mA; (2)forward voltage: 1.80V max at IF=20mA; (3)reverse current: 100A at VR=2.0V; (4)wavelength at peak eission: 890nm at IF=10mA; (5)spectral bandwidth between half power points: 80nm at IF=10mA; (6)spectral shift with temperature: +0.18nm/ at IF=constant; (7)emission angle at half power points: 90 Deg. at IF=20mA; (8)output rise time: 500ns at IF(PK)=100mA; (9)output fall time: 250ns at IF(PK)=100mA, PW=10s, D.C.=10.0%.