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NTZD3155CT2G

MOSFET COMP 540mA 20V

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SeekIC No. : 00153279 Detail

NTZD3155CT2G: MOSFET COMP 540mA 20V

NTZD3155CT2G Data Sheet

floor Price/Ceiling Price

US $ .09~.32 / Piece | Get Latest Price
Part Number:
NTZD3155CT2G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.32
  • $.19
  • $.15
  • $.09
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N and P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 6 V Continuous Drain Current : 0.54 A at N Channel, 0.43 A at P Channel
Resistance Drain-Source RDS (on) : 550 mOhms at 4.5 V at N Channel, 900 mOhms at 4.5 V at P Channel Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-563 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual
Transistor Polarity : N and P-Channel
Package / Case : SOT-563
Gate-Source Breakdown Voltage : +/- 6 V
Continuous Drain Current : 0.54 A at N Channel, 0.43 A at P Channel
Resistance Drain-Source RDS (on) : 550 mOhms at 4.5 V at N Channel, 900 mOhms at 4.5 V at P Channel


Parameters:

Technical/Catalog InformationNTZD3155CT2G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C540mA, 430mA
Rds On (Max) @ Id, Vgs550 mOhm @ 540mA, 4.5V
Input Capacitance (Ciss) @ Vds 150pF @ 16V
Power - Max250mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs2.5nC @ 4.5V
Package / CaseSOT-563
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTZD3155CT2G
NTZD3155CT2G



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