NTZD3154NT1G

MOSFET 20V 540mA Dual N-Channel w/ESD

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NTZD3154NT1G: MOSFET 20V 540mA Dual N-Channel w/ESD

floor Price/Ceiling Price

US $ .08~.29 / Piece | Get Latest Price
Part Number:
NTZD3154NT1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.29
  • $.17
  • $.14
  • $.08
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 6 V Continuous Drain Current : 0.54 A
Resistance Drain-Source RDS (on) : 550 mOhms at 4.5 V Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-563 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual
Package / Case : SOT-563
Gate-Source Breakdown Voltage : +/- 6 V
Continuous Drain Current : 0.54 A
Resistance Drain-Source RDS (on) : 550 mOhms at 4.5 V


Parameters:

Technical/Catalog InformationNTZD3154NT1G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C540mA
Rds On (Max) @ Id, Vgs550 mOhm @ 540mA, 4.5V
Input Capacitance (Ciss) @ Vds 150pF @ 16V
Power - Max250mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs2.5nC @ 4.5V
Package / CaseSOT-563
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTZD3154NT1G
NTZD3154NT1G
NTZD3154NT1GOSCT ND
NTZD3154NT1GOSCTND
NTZD3154NT1GOSCT



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