MOSFET 20V 540mA/-430mA Complementary w/ESD
NTZD3155CT1G: MOSFET 20V 540mA/-430mA Complementary w/ESD
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Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | +/- 6 V | Continuous Drain Current : | 0.54 A at N Channel, 0.43 A at P Channel | ||
Resistance Drain-Source RDS (on) : | 550 mOhms at 4.5 V at N Channel, 900 mOhms at 4.5 V at P Channel | Configuration : | Dual | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-563 | Packaging : | Reel |
Technical/Catalog Information | NTZD3155CT1G |
Vendor | ON Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N and P-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 540mA, 430mA |
Rds On (Max) @ Id, Vgs | 550 mOhm @ 540mA, 4.5V |
Input Capacitance (Ciss) @ Vds | 150pF @ 16V |
Power - Max | 250mW |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 2.5nC @ 4.5V |
Package / Case | SOT-563 |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NTZD3155CT1G NTZD3155CT1G NTZD3155CT1GOSDKR ND NTZD3155CT1GOSDKRND NTZD3155CT1GOSDKR |