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NTY100N10G

MOSFET 100V 123A N-Channel

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SeekIC No. : 00159917 Detail

NTY100N10G: MOSFET 100V 123A N-Channel

NTY100N10G Data Sheet

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Part Number:
NTY100N10G
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 123 A
Resistance Drain-Source RDS (on) : 10 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3BPL Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Resistance Drain-Source RDS (on) : 10 mOhms
Continuous Drain Current : 123 A
Package / Case : TO-3BPL


Parameters:

Technical/Catalog InformationNTY100N10G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C123A
Rds On (Max) @ Id, Vgs10 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds 10110pF @ 25V
Power - Max313W
PackagingTube
Gate Charge (Qg) @ Vgs350nC @ 10V
Package / CaseTO-264-3, TO-3BPL
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTY100N10G
NTY100N10G



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