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NTY100N10

MOSFET 100V 123A N-Channel

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NTY100N10: MOSFET 100V 123A N-Channel

NTY100N10 Data Sheet

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Part Number:
NTY100N10
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
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Upload time: 2024/6/11

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 123 A
Resistance Drain-Source RDS (on) : 10 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3BPL Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Resistance Drain-Source RDS (on) : 10 mOhms
Continuous Drain Current : 123 A
Package / Case : TO-3BPL


Features:

• Source-to-Drain Diode Recovery Time Comparable to a Discrete
  Fast Recovery Diode
• Avalanche Energy Specified
• IDSS and RDS(on) Specified at Elevated Temperature


Application

• PWM Motor Control
• Power Supplies
• Converters


Pinout

Connection Diagram


Specifications

Rating Symbol Value Unit
Drain−to−Source Voltage VDSS 100 V
Gate−to−Source Voltage −(RGS = 1 M) VDGR 100 V
Gate-Source Voltage - Continuous
- Non-Repetitive (tp  10 ms)		 VGS
VGSM		 ±20
±40		 V
V
Drain Current (Note 1)
- Continuous @ TC = 25°C
- Pulsed		 lD
lDM		 123
369		 A
A
Total Power Dissipation (Note 1)
Derate above 25°C		 PD 313
5.0		 Watts
W/°C
Operating and Storage Temperature Range TJ, Tstg -55TO150 °C
Single Pulse Drain-to-Source
Avalanche Energy - Starting TJ = 25°C
(VDD = 80 Vdc, VGS = 10 Vdc, Peak
IL = 100 Apk, L = 0.1 mH, RG = 25 )		 EAS 500 mJ
Thermal Resistance - Junction to Case
- Junction to Ambient		 RJC
RJA		 0.4
25		 °C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8, from case for 10 seconds		 TL 260 °C
1. Pulse Test: Pulse Width = 10 s, Duty-Cycle = 2%.


Parameters:

Technical/Catalog InformationNTY100N10
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C123A
Rds On (Max) @ Id, Vgs10 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds 10110pF @ 25V
Power - Max313W
PackagingTube
Gate Charge (Qg) @ Vgs350nC @ 10V
Package / CaseTO-264-3, TO-3BPL
FET FeatureStandard
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTY100N10
NTY100N10



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