NTMD6N02R2

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 6.5 A
Resistance Drain-Source RDS (on) : 43 mOhms at 4.5 V


Features:

• Ultra Low RDS(on)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Miniature Dual SO−8 Surface Mount Package
• Diode Exhibits High Speed, Soft Recovery
• Avalanche Energy Specified
• SO−8 Mounting Information Provided


Application

• DC−DC Converters
• Low Voltage Motor Control
• Power Management in Portable and Battery−Powered Products, for
  example, Computers, Printers, Cellular and Cordless Telephones and
  PCMCIA Cards


Pinout




Specifications

Rating	Symbol	Value	Unit
Drain−to−Source Voltage	VDSS	−30	V
Drain−to−Gate Voltage (RGS = 1.0 m)	VDGR	20	V
Gate−to−Source Voltage − Continuous	VGS	±12	V
Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4)	RJA PD ID ID IDM	62.5 2.0 6.5 5.5 50	°C/W W A A A
Thermal Resistance − Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4)	RJA PD ID ID IDM	102 1.22 5.07 4.07 40	°C/W W A A A
Thermal Resistance − Junction−to−Ambient (Note 3) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4)	RJA PD ID ID IDM	172 0.73 3.92 3.14 30	°C/W W A A A

1. Mounted onto a 2, square FR−4 Board
(1, sq. 2 oz. Cu 0.06, thick single sided), t < 10 seconds.
2. Mounted onto a 2, square FR−4 Board
(1, sq. 2 oz. Cu 0.06, thick single sided), t = steady state.
3. Minimum FR−4 or G−10 PCB, t = steady state.
4. Pulse Test: Pulse Width = 10 s, Duty Cycle = 2%.