MOSFET 20V 5.2A
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Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | 5.2 A at N Channel, 3.4 A at P Channel | ||
Resistance Drain-Source RDS (on) : | 43 mOhms at 4.5 V at N Channel, 100 mOhms at 4.5 V at P Channel | Configuration : | Dual Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 Narrow | Packaging : | Reel |
Rating | Symbol | Value | Unit |
DraintoSource Voltage NChannel PChannel |
VDSS | 20 20 |
Vdc |
GatetoSource Voltage | VGS | ±12 | Vdc |
Drain Current Continuous NChannel PChannel Pulsed NChannel PChannel |
ID IDM |
5.2 3.4 48 17 |
A |
Operating and Storage Temperature Range | TJ, Tstg | 55 to 150 |
°C |
Total Power Dissipation @ TA= 25°C (Note 2) |
Pd | 2.0 | Watts |
Thermal Resistance Junction to Ambient (Note 2) |
RJA | 62.5 | °C/W |
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds. |
TL | 260 | °C |
These miniature surface mount MOSFETs NTMD2C02R2 feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time. MiniMOS NTMD2C02R2 are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications of NTMD2C02R2 are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. NTMD2C02R2 can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.