MOSFET 30V 4A N-Channel
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 4 A | ||
Resistance Drain-Source RDS (on) : | 60 mOhms | Configuration : | Dual Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 Narrow | Packaging : | Reel |
Technical/Catalog Information | NTMD4N03R2G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 N-Channel (Dual) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 4A |
Rds On (Max) @ Id, Vgs | 60 mOhm @ 4A, 10V |
Input Capacitance (Ciss) @ Vds | 400pF @ 20V |
Power - Max | 2W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 16nC @ 10V |
Package / Case | 8-SOIC (3.9mm Width) |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NTMD4N03R2G NTMD4N03R2G NTMD4N03R2GOSTR ND NTMD4N03R2GOSTRND NTMD4N03R2GOSTR |