NTMD3P03R2

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 85 mOhms
Continuous Drain Current : 3.86 A


Features:

• High Efficiency Components in a Dual SO−8 Package
• High Density Power MOSFET with Low RDS(on)
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode Exhibits High Speed with Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for the SO−8 Package is Provided


Application




Pinout




Specifications

Rating	Symbol	Value	Unit
Drain−to−Source Voltage	VDSS	−30	V
Gate−to−Source Voltage − Continuous	VGS	±20	V
Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4)	RJA PD ID ID IDM	171 0.73 −2.34 −1.87 −8.0	°C/W W A A A
Thermal Resistance − Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4)	RJA PD ID ID IDM	100 1.25 −3.05 −2.44 −12	°C/W W A A A
Thermal Resistance − Junction−to−Ambient (Note 3) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4)	RJA PD ID ID IDM	62.5 2.0 −3.86 −3.1 −15	°C/W W A A A
Operating and Storage Temperature Range	TJ, Tstg	−55 to +150	°C
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = −30 Vdc, VGS = −4.5 Vdc, Peak IL = −7.5 Apk, L = 5 mH, RG = 25 W)	EAS	140	mJ
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds	TL	260	°C

1. Minimum FR−4 or G−10 PCB, t = Steady State.
2. Mounted onto a 2, square FR−4 Board (1, sq. 2 oz Cu 0.06, thick single sided), t = steady state.
3. Mounted onto a 2, square FR−4 Board (1, sq. 2 oz Cu 0.06, thick single sided), t 3 10 seconds.
4. Pulse Test: Pulse Width = 300
s, Duty Cycle = 2%.