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SeekIC No. : 00162445 Detail

NTMD2P01R2G: MOSFET -16V 2.3A Dual P-Channel

NTMD2P01R2G Data Sheet

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Part Number:: NTMD2P01R2G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Upload time: 2024/12/24

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Product Details

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Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	16 V
Gate-Source Breakdown Voltage :	+/- 10 V	Continuous Drain Current :	3.85 A
Resistance Drain-Source RDS (on) :	100 mOhms at 4.5 V	Configuration :	Dual Dual Drain
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOIC-8 Narrow	Packaging :	Reel

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 10 V
Continuous Drain Current : 3.85 A
Resistance Drain-Source RDS (on) : 100 mOhms at 4.5 V
Drain-Source Breakdown Voltage : 16 V

Parameters:

Technical/Catalog Information	NTMD2P01R2G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	16V
Current - Continuous Drain (Id) @ 25° C	2.3A
Rds On (Max) @ Id, Vgs	100 mOhm @ 2.4A, 4.5V
Input Capacitance (Ciss) @ Vds	750pF @ 16V
Power - Max	710mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	18nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NTMD2P01R2G NTMD2P01R2G NTMD2P01R2GOS ND NTMD2P01R2GOSND NTMD2P01R2GOS

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NTMD2P01R2G

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