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NTJS4151PT1

MOSFET -20V -4.2A P-Channel

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SeekIC No. : 00165740 Detail

NTJS4151PT1: MOSFET -20V -4.2A P-Channel

NTJS4151PT1 Data Sheet

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Part Number:
NTJS4151PT1
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 3.3 A
Resistance Drain-Source RDS (on) : 60 mOhms at 4.5 V Configuration : Single Quad Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-88 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V
Configuration : Single Quad Drain
Resistance Drain-Source RDS (on) : 60 mOhms at 4.5 V
Continuous Drain Current : 3.3 A
Package / Case : SC-88


Parameters:

Technical/Catalog InformationNTJS4151PT1
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C3.3A
Rds On (Max) @ Id, Vgs60 mOhm @ 3.3A, 4.5V
Input Capacitance (Ciss) @ Vds 850pF @ 10V
Power - Max1W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs10nC @ 4.5V
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTJS4151PT1
NTJS4151PT1
NTJS4151PT1OSCT ND
NTJS4151PT1OSCTND
NTJS4151PT1OSCT



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