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NTJS3157NT4: MOSFET 20V 4A N-Channel

NTJS3157NT4 Data Sheet

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Part Number:: NTJS3157NT4
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/23

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MOSFET 12V 3.3A P-Channel
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US $.09 - .19 / Piece

MOSFET 12V 3.3A P-Channel

Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	20 V
Gate-Source Breakdown Voltage :	+/- 8 V	Continuous Drain Current :	3.2 A
Resistance Drain-Source RDS (on) :	60 mOhms at 4.5 V	Configuration :	Single Quad Drain
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SC-88	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Configuration : Single Quad Drain
Continuous Drain Current : 3.2 A
Resistance Drain-Source RDS (on) : 60 mOhms at 4.5 V
Package / Case : SC-88

Parameters:

Technical/Catalog Information	NTJS3157NT4
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	3.2A
Rds On (Max) @ Id, Vgs	60 mOhm @ 4A, 4.5V
Input Capacitance (Ciss) @ Vds	500pF @ 10V
Power - Max	1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	15nC @ 4.5V
Package / Case	SC-70-6, SC-88, SOT-323-6, SOT-363
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NTJS3157NT4 NTJS3157NT4

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NTJS3157NT4

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