MOSFET 20V 4A N-Channel
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | 3.2 A | ||
Resistance Drain-Source RDS (on) : | 60 mOhms at 4.5 V | Configuration : | Single Quad Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SC-88 | Packaging : | Reel |
Technical/Catalog Information | NTJS3157NT1G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 3.2A |
Rds On (Max) @ Id, Vgs | 60 mOhm @ 4A, 4.5V |
Input Capacitance (Ciss) @ Vds | 500pF @ 10V |
Power - Max | 1W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 15nC @ 4.5V |
Package / Case | SC-70-6, SC-88, SOT-323-6, SOT-363 |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NTJS3157NT1G NTJS3157NT1G NTJS3157NT1GOSTR ND NTJS3157NT1GOSTRND NTJS3157NT1GOSTR |