MOSFET 20V Dual N-Channel ESD Protection
NTJD4401NT1G: MOSFET 20V Dual N-Channel ESD Protection
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | 0.91 A | ||
Resistance Drain-Source RDS (on) : | 375 mOhms at 4.5 V | Configuration : | Dual | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SC-88 | Packaging : | Reel |
Technical/Catalog Information | NTJD4401NT1G |
Vendor | ON Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 N-Channel (Dual) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 630mA |
Rds On (Max) @ Id, Vgs | 375 mOhm @ 630mA, 4.5V |
Input Capacitance (Ciss) @ Vds | 46pF @ 20V |
Power - Max | 270mW |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 3nC @ 4.5V |
Package / Case | SC-70-6, SC-88, SOT-323-6, SOT-363 |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NTJD4401NT1G NTJD4401NT1G NTJD4401NT1GOSDKR ND NTJD4401NT1GOSDKRND NTJD4401NT1GOSDKR |