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NTJD1155LT1G

MOSFET 8V +/-1.3A P-Channel w/Level Shift

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SeekIC No. : 00152290 Detail

NTJD1155LT1G: MOSFET 8V +/-1.3A P-Channel w/Level Shift

NTJD1155LT1G Data Sheet

floor Price/Ceiling Price

US $ .1~.21 / Piece | Get Latest Price
Part Number:
NTJD1155LT1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.21
  • $.17
  • $.12
  • $.1
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N and P-Channel Drain-Source Breakdown Voltage : 8 V at P Channel
Gate-Source Breakdown Voltage : 1 V Continuous Drain Current : +/- 1.3 A
Resistance Drain-Source RDS (on) : 320 mOhms at P Channel Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-88 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Transistor Polarity : N and P-Channel
Package / Case : SC-88
Gate-Source Breakdown Voltage : 1 V
Drain-Source Breakdown Voltage : 8 V at P Channel
Continuous Drain Current : +/- 1.3 A
Resistance Drain-Source RDS (on) : 320 mOhms at P Channel


Parameters:

Technical/Catalog InformationNTJD1155LT1G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25° C1.3A
Rds On (Max) @ Id, Vgs175 mOhm @ 1.2A, 4.5V
Input Capacitance (Ciss) @ Vds -
Power - Max400mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs-
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTJD1155LT1G
NTJD1155LT1G
NTJD1155LT1GOSCT ND
NTJD1155LT1GOSCTND
NTJD1155LT1GOSCT



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