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NTJD2152PT1G

MOSFET 8V Dual P-Channel ESD Protection

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SeekIC No. : 00162667 Detail

NTJD2152PT1G: MOSFET 8V Dual P-Channel ESD Protection

NTJD2152PT1G Data Sheet

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Part Number:
NTJD2152PT1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 8 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 0.775 A
Resistance Drain-Source RDS (on) : 300 mOhms at 4.5 V Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-88 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 8 V
Drain-Source Breakdown Voltage : 8 V
Package / Case : SC-88
Resistance Drain-Source RDS (on) : 300 mOhms at 4.5 V
Continuous Drain Current : 0.775 A


Parameters:

Technical/Catalog InformationNTJD2152PT1G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25° C775mA
Rds On (Max) @ Id, Vgs300 mOhm @ 570mA, 4.5V
Input Capacitance (Ciss) @ Vds 225pF @ 8V
Power - Max270mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs4nC @ 4.5V
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTJD2152PT1G
NTJD2152PT1G
NTJD2152PT1GOSDKR ND
NTJD2152PT1GOSDKRND
NTJD2152PT1GOSDKR



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