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NTJD4158CT2G

MOSFET PFET 20V .88A 1OHM

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SeekIC No. : 00151525 Detail

NTJD4158CT2G: MOSFET PFET 20V .88A 1OHM

NTJD4158CT2G Data Sheet

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US $ .11~.3 / Piece | Get Latest Price
Part Number:
NTJD4158CT2G
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • 25~100
  • 100~500
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  • Processing time
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Upload time: 2024/12/24

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Product Details

Quick Details

Transistor Polarity : N and P-Channel Drain-Source Breakdown Voltage : 30 V at N Channel, 20 V at P Channel
Gate-Source Breakdown Voltage : +/- 20 Vl, +/- 12 V Continuous Drain Current : 0.25 A at N Channel, 0.88 A at P Channel
Resistance Drain-Source RDS (on) : 1500 mOhms at 4.5 V at N Channel, 260 mOhms at 4.5 V at P Channel Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-88 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Transistor Polarity : N and P-Channel
Package / Case : SC-88
Drain-Source Breakdown Voltage : 30 V at N Channel, 20 V at P Channel
Continuous Drain Current : 0.25 A at N Channel, 0.88 A at P Channel
Resistance Drain-Source RDS (on) : 1500 mOhms at 4.5 V at N Channel, 260 mOhms at 4.5 V at P Channel
Gate-Source Breakdown Voltage : +/- 20 Vl, +/- 12 V


Parameters:

Technical/Catalog InformationNTJD4158CT2G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)30V, 20V
Current - Continuous Drain (Id) @ 25° C250mA, 880mA
Rds On (Max) @ Id, Vgs1.5 Ohm @ 10mA, 4.5V
Input Capacitance (Ciss) @ Vds 33pF @ 5V
Power - Max270mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs1.5nC @ 5V
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTJD4158CT2G
NTJD4158CT2G



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