Position: Home  > All Categories> Integrated Circuits (ICs) > NTJD4158CT2G

NTJD4158CT2G

MOSFET PFET 20V .88A 1OHM

product image

NTJD4158CT2G Picture
See larger image
SeekIC No. : 00151525 Detail

NTJD4158CT2G: MOSFET PFET 20V .88A 1OHM

NTJD4158CT2G Data Sheet

floor Price/Ceiling Price

US $ .11~.3 / Piece | Get Latest Price
Part Number:
NTJD4158CT2G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.3
  • $.2
  • $.16
  • $.11
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N and P-Channel Drain-Source Breakdown Voltage : 30 V at N Channel, 20 V at P Channel
Gate-Source Breakdown Voltage : +/- 20 Vl, +/- 12 V Continuous Drain Current : 0.25 A at N Channel, 0.88 A at P Channel
Resistance Drain-Source RDS (on) : 1500 mOhms at 4.5 V at N Channel, 260 mOhms at 4.5 V at P Channel Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-88 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Transistor Polarity : N and P-Channel
Package / Case : SC-88
Drain-Source Breakdown Voltage : 30 V at N Channel, 20 V at P Channel
Continuous Drain Current : 0.25 A at N Channel, 0.88 A at P Channel
Resistance Drain-Source RDS (on) : 1500 mOhms at 4.5 V at N Channel, 260 mOhms at 4.5 V at P Channel
Gate-Source Breakdown Voltage : +/- 20 Vl, +/- 12 V


Parameters:

Technical/Catalog InformationNTJD4158CT2G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)30V, 20V
Current - Continuous Drain (Id) @ 25° C250mA, 880mA
Rds On (Max) @ Id, Vgs1.5 Ohm @ 10mA, 4.5V
Input Capacitance (Ciss) @ Vds 33pF @ 5V
Power - Max270mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs1.5nC @ 5V
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTJD4158CT2G
NTJD4158CT2G



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
Filters
PICO2205A
PICO2204A
Cable Assemblies
CS1W-CN114
XW2Z-500T
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
View more