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NTJD4152PT1G

MOSFET 20V 0.88mA P-Channel ESD Protection

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SeekIC No. : 00146694 Detail

NTJD4152PT1G: MOSFET 20V 0.88mA P-Channel ESD Protection

NTJD4152PT1G Data Sheet

floor Price/Ceiling Price

US $ .11~.29 / Piece | Get Latest Price
Part Number:
NTJD4152PT1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.29
  • $.19
  • $.15
  • $.11
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 0.88 A
Resistance Drain-Source RDS (on) : 260 mOhms at 4.5 V Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-88 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : SC-88
Continuous Drain Current : 0.88 A
Resistance Drain-Source RDS (on) : 260 mOhms at 4.5 V


Parameters:

Technical/Catalog InformationNTJD4152PT1G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C880mA
Rds On (Max) @ Id, Vgs260 mOhm @ 880mA, 4.5V
Input Capacitance (Ciss) @ Vds 155pF @ 20V
Power - Max272mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs2.2nC @ 4.5V
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTJD4152PT1G
NTJD4152PT1G
NTJD4152PT1GOSCT ND
NTJD4152PT1GOSCTND
NTJD4152PT1GOSCT



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