MOSFET 20V/-8V 0.63A/-.775A
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Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | 20 V, - 8 V | ||
Gate-Source Breakdown Voltage : | +/- 12 V, +/- 8 V | Continuous Drain Current : | 630 mA, - 775 mA | ||
Resistance Drain-Source RDS (on) : | 0.29 Ohms at 4.5 V, 0.22 Ohms at - 4.5 V | Configuration : | Dual | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-363-6 | Packaging : | Reel |
Technical/Catalog Information | NTJD4105CT4 |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N and P-Channel |
Drain to Source Voltage (Vdss) | 20V, 8V |
Current - Continuous Drain (Id) @ 25° C | 630mA, 775mA |
Rds On (Max) @ Id, Vgs | 375 mOhm @ 630mA, 4.5V |
Input Capacitance (Ciss) @ Vds | 46pF @ 20V |
Power - Max | 270mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 3nC @ 4.5V |
Package / Case | SC-70-6, SC-88, SOT-323-6, SOT-363 |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | NTJD4105CT4 NTJD4105CT4 |