MOSFET 20V/-8V 0.63A/-.775A Complementary
NTJD4105CT1G: MOSFET 20V/-8V 0.63A/-.775A Complementary
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Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | 20 V at N Channel, 8 V at P Channel | ||
Gate-Source Breakdown Voltage : | +/- 12 V, +/- 8 V | Continuous Drain Current : | 0.63 A at N Channel, 0.775 A at P Channel | ||
Resistance Drain-Source RDS (on) : | 375 mOhms at 4.5 V at N Channel, 300 mOhms at 4.5 V at P Channel | Configuration : | Dual | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SC-88 | Packaging : | Reel |
Technical/Catalog Information | NTJD4105CT1G |
Vendor | ON Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N and P-Channel |
Drain to Source Voltage (Vdss) | 20V, 8V |
Current - Continuous Drain (Id) @ 25° C | 630mA, 775mA |
Rds On (Max) @ Id, Vgs | 375 mOhm @ 630mA, 4.5V |
Input Capacitance (Ciss) @ Vds | 46pF @ 20V |
Power - Max | 270mW |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 3nC @ 4.5V |
Package / Case | SC-70-6, SC-88, SOT-323-6, SOT-363 |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NTJD4105CT1G NTJD4105CT1G NTJD4105CT1GOSDKR ND NTJD4105CT1GOSDKRND NTJD4105CT1GOSDKR |