NTHD5904T1

FET Feature: Logic Level Gate
Input Capacitance (Ciss) @ Vds: -
Mounting Type: Surface Mount
Series: -
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 20V
Vgs(th) (Max) @ Id: 600mV @ 250µA
Package / Case: 8-SMD, Flat Lead
Power - Max: 1.1W
Current - Continuous Drain (Id) @ 25° C: 3.1A
Gate Charge (Qg) @ Vgs: 6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V
Packaging: Tape & Reel (TR)
Manufacturer: ON Semiconductor
Supplier Device Package: ChipFET?


Features:

• Low RDS(on) for Higher Efficiency
• Logic Level Gate Drive
• Miniature ChipFET^TM Surface Mount Package Saves Board Space


Application

• Power Management in Portable and BatteryPowered Products; i.e., Cellular and Cordless Telephones and PCMCIA Cards


Pinout




Specifications

Rating	Symbol	5 secs	Steady State	Unit
DrainSource Voltage	VDS	20		V
GateSource Voltage	VGS	±12		V
Continuous Drain Current (TJ = 150°C) (Note 1) TA = 25°C TA = 85°C	ID	±4.2 ±3.0	±3.1 ±2.2	A
Pulsed Drain Current	IDM	±10		A
Continuous Source Current (Diode Conduction) (Note 1)	IS	1.8	0.9	A
Maximum Power Dissipation (Note 1) TA = 25°C TA = 85°C	PD	2.1 1.1	1.1 0.6	W
Operating Junction and Storage Temperature Range	TJ, Tstg	55 to +150		°C