Features: • Offers an Ultra Low RDS(on) Solution in the ChipFET Package• Miniature ChipFET Package 40% Smaller Footprint than TSOP−6 making it an Ideal Device for Applications where Board Space is at a Premium• Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely...
NTHD2102P: Features: • Offers an Ultra Low RDS(on) Solution in the ChipFET Package• Miniature ChipFET Package 40% Smaller Footprint than TSOP−6 making it an Ideal Device for Applications wher...
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Rating | Symbol | Value | Unit |
Drain−to−Source Voltage | VDSS | −8.0 | V |
Gate−to−Source Voltage − Continuous | VGS | ±8.0 | V |
Drain Current − Continuous − 5 seconds |
lD lD |
−3.4 −4.6 |
A |
Total Power Dissipation Continuous @ TA = 25°C (5 sec) @ TA = 25°C Continuous @ 85°C (5 sec) @ 85°C |
PD | 1.1 2.1 0.6 1.1 |
W |
Operating Junction and Storage Temperature Range |
TJ, Tstg | −55 to +150 |
°C |
Continuous Source Current (Diode Conduction) |
ls | −1.1 | A |
Thermal Resistance (Note 1) Junction−to−Ambient, 5 sec Junction−to−Ambient, Continuous |
RJA RJA |
60 113 |
°C/W |
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds |
TL |
260 |
°C |