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NTHD5904NT1G

MOSFET 20V 4.5A Dual N-Channel

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SeekIC No. : 00161220 Detail

NTHD5904NT1G: MOSFET 20V 4.5A Dual N-Channel

NTHD5904NT1G Data Sheet

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Part Number:
NTHD5904NT1G
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 4.5 A
Resistance Drain-Source RDS (on) : 65 mOhms at 4.5 V Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : Chip FET Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : 4.5 A
Package / Case : Chip FET
Resistance Drain-Source RDS (on) : 65 mOhms at 4.5 V


Parameters:

Technical/Catalog InformationNTHD5904NT1G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C2.5A
Rds On (Max) @ Id, Vgs65 mOhm @ 3.3A, 4.5V
Input Capacitance (Ciss) @ Vds 465pF @ 16V
Power - Max640mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs6nC @ 4.5V
Package / Case8-ChipFET?
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTHD5904NT1G
NTHD5904NT1G
NTHD5904NT1GOSTR ND
NTHD5904NT1GOSTRND
NTHD5904NT1GOSTR



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