MOSFET 20V 4.5A Dual N-Channel
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | 4.5 A | ||
Resistance Drain-Source RDS (on) : | 65 mOhms at 4.5 V | Configuration : | Dual | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | Chip FET | Packaging : | Reel |
Technical/Catalog Information | NTHD5904NT1G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 2.5A |
Rds On (Max) @ Id, Vgs | 65 mOhm @ 3.3A, 4.5V |
Input Capacitance (Ciss) @ Vds | 465pF @ 16V |
Power - Max | 640mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 6nC @ 4.5V |
Package / Case | 8-ChipFET? |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NTHD5904NT1G NTHD5904NT1G NTHD5904NT1GOSTR ND NTHD5904NT1GOSTRND NTHD5904NT1GOSTR |