NTHD5903T1

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual Dual Drain
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 2.2 A
Package / Case : Chip FET
Resistance Drain-Source RDS (on) : 155 mOhms at 4.5 V


Features:

• Low RDS(on) for Higher Efficiency
• Logic Level Gate Drive
• Miniature ChipFET Surface Mount Package Saves Board Space


Application

• Power Management in Portable and BatteryPowered Products; i.e., Cellular and Cordless Telephones and PCMCIA Cards


Pinout




Specifications

Rating	Symbol	5 secs	Steady State	Unit
DrainSource Voltage	VDS	20		V
GateSource Voltage	VGS	+12		V
Continuous Drain Current (TJ = 150°C) (Note 1) TA = 25°C TA = 85°C	ID	±2.9 ±2.1	±2.1 ±1.5	A
Pulsed Drain Current	IDM	±10		A
Continuous Source Current (Diode Conduction) (Note 1)	IS	1.8	0.9	A
Maximum Power Dissipation (Note 1) TA = 25°C TA = 85°C	PD	2.1 1.1	1.1 0.6	W
Operating Junction and Storage Temperature Range	TJ, Tstg	55 to +150		°C