NTHD4P02FT1G, US $ .11-.29 , ON Semiconductor, NTHD4P02FT1G DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00148418 Detail

NTHD4P02FT1G: MOSFET -20V -3A P-Channel w/3A Schottky

NTHD4P02FT1G Data Sheet

US $ .11~.29 / Piece | Get Latest Price

Part Number:: NTHD4P02FT1G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/23

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NTHD2102P evaluate
Features: • Offers an Ultra Low RDS(on) Solution in the ChipFET Package• Miniature Chi...
NTHD2102PT1 evaluate
MOSFET -8V -4.6A P-Channel
NTHD2102PT1G evaluate
US $.23 - .36 / Piece

MOSFET -8V -4.6A P-Channel

Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	20 V
Gate-Source Breakdown Voltage :	+/- 12 V	Continuous Drain Current :	2.2 A
Resistance Drain-Source RDS (on) :	155 mOhms at 4.5 V	Configuration :	Single Dual Drain
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	Chip FET	Packaging :	Reel

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V
Configuration : Single Dual Drain
Continuous Drain Current : 2.2 A
Package / Case : Chip FET
Resistance Drain-Source RDS (on) : 155 mOhms at 4.5 V

Parameters:

Technical/Catalog Information	NTHD4P02FT1G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	2.2A
Rds On (Max) @ Id, Vgs	155 mOhm @ 2.2A, 4.5V
Input Capacitance (Ciss) @ Vds	300pF @ 10V
Power - Max	1.1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	6nC @ 4.5V
Package / Case	8-ChipFET?
FET Feature	Diode (Isolated)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NTHD4P02FT1G NTHD4P02FT1G NTHD4P02FT1GOSTR ND NTHD4P02FT1GOSTRND NTHD4P02FT1GOSTR

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