MOSFET 20V 3.9A N-Channel w/3.7A Schottky
NTHD4N02FT1G: MOSFET 20V 3.9A N-Channel w/3.7A Schottky
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | 2.7 A | ||
Resistance Drain-Source RDS (on) : | 80 mOhms at 4.5 V | Configuration : | Single Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | Chip FET | Packaging : | Reel |
Technical/Catalog Information | NTHD4N02FT1G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 2.9A |
Rds On (Max) @ Id, Vgs | 80 mOhm @ 2.9A, 4.5V |
Input Capacitance (Ciss) @ Vds | 300pF @ 10V |
Power - Max | 910mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 4nC @ 4.5V |
Package / Case | 8-ChipFET? |
FET Feature | Diode (Isolated) |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NTHD4N02FT1G NTHD4N02FT1G NTHD4N02FT1GOS ND NTHD4N02FT1GOSND NTHD4N02FT1GOS |