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NTHD4N02FT1

MOSFET 20V 3.9A N-Channel

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SeekIC No. : 00166213 Detail

NTHD4N02FT1: MOSFET 20V 3.9A N-Channel

NTHD4N02FT1 Data Sheet

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Part Number:
NTHD4N02FT1
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 2.9 A
Resistance Drain-Source RDS (on) : 80 mOhms at 4.5 V Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : Chip FET Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V
Configuration : Single Dual Drain
Continuous Drain Current : 2.9 A
Package / Case : Chip FET
Resistance Drain-Source RDS (on) : 80 mOhms at 4.5 V


Parameters:

Technical/Catalog InformationNTHD4N02FT1
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C2.9A
Rds On (Max) @ Id, Vgs80 mOhm @ 2.9A, 4.5V
Input Capacitance (Ciss) @ Vds 300pF @ 10V
Power - Max910mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs4nC @ 4.5V
Package / Case8-ChipFET?
FET FeatureDiode (Isolated)
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTHD4N02FT1
NTHD4N02FT1
NTHD4N02FT1OS ND
NTHD4N02FT1OSND
NTHD4N02FT1OS



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