MOSFET 30V 3.9A Dual N-Channel
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 2.9 A | ||
Resistance Drain-Source RDS (on) : | 85 mOhms | Configuration : | Dual Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | Chip FET | Packaging : | Reel |
Technical/Catalog Information | NTHD4502NT1G |
Vendor | ON Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 N-Channel (Dual) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 2.2A |
Rds On (Max) @ Id, Vgs | 85 mOhm @ 2.9A, 10V |
Input Capacitance (Ciss) @ Vds | 140pF @ 15V |
Power - Max | 640mW |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 7nC @ 10V |
Package / Case | 8-ChipFET? |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NTHD4502NT1G NTHD4502NT1G NTHD4502NT1GOSDKR ND NTHD4502NT1GOSDKRND NTHD4502NT1GOSDKR |