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NTHD3102CT1G

MOSFET 20V 5.5A/-4.2A Complementary

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SeekIC No. : 00145927 Detail

NTHD3102CT1G: MOSFET 20V 5.5A/-4.2A Complementary

NTHD3102CT1G Data Sheet

floor Price/Ceiling Price

US $ .2~.35 / Piece | Get Latest Price
Part Number:
NTHD3102CT1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

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  • 25~100
  • 100~500
  • Unit Price
  • $.35
  • $.3
  • $.25
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  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/3/13

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Product Details

Quick Details

Transistor Polarity : N and P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 4 A at N Channel, 3.1 A at P Channel
Resistance Drain-Source RDS (on) : 45 mOhms at 4.5 V at N Channel, 80 mOhms at 4.5 V at P Channel Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : Chip FET Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Transistor Polarity : N and P-Channel
Configuration : Dual Dual Drain
Continuous Drain Current : 4 A at N Channel, 3.1 A at P Channel
Resistance Drain-Source RDS (on) : 45 mOhms at 4.5 V at N Channel, 80 mOhms at 4.5 V at P Channel
Package / Case : Chip FET


Parameters:

Technical/Catalog InformationNTHD3102CT1G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C4A, 3.1A
Rds On (Max) @ Id, Vgs45 mOhm @ 4.4A, 4.5V
Input Capacitance (Ciss) @ Vds 510pF @ 10V
Power - Max1.1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs7.9nC @ 4.5V
Package / Case8-ChipFET?
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTHD3102CT1G
NTHD3102CT1G
NTHD3102CT1GOSTR ND
NTHD3102CT1GOSTRND
NTHD3102CT1GOSTR



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